Texture competition during thin film deposition - effects of grain boundary migration

被引:16
作者
Huang, HC [1 ]
Gilmer, GH
机构
[1] Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1016/S0927-0256(01)00234-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we describe an implementation of grain boundary migration in the atomistic simulator of thin film deposition (ADEPT), and apple the simulator to study effects Of the grain boundary migration on texture evolution. In the implementation. atoms are classified into two categories: those belong to a single grain and those at grain boundaries. An atom is defined as one at a grain boundary if it has more than half of its neighbors occupied and not all of the neighboring atoms Lire in the same grain. The grain boundary atom is attempted to re-align with neighboring grains to represent the grain boundary migration: the attempt probability is defined by the grain boundary migration coefficient. Our Studies show that grain boundary migration does not always assist formation of texture with a top surface of the lowest energy. At the nucleation stage of thin film deposition. high migration coefficient of grain boundaries may enhance the formation of grain nuclei with top Surfaces of higher energy. and therefore effectively may suppress formation Of textures with a top surface of the lowest energy. This effect may provide an extra dimension to engineer textures of thin films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:190 / 196
页数:7
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