The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

被引:96
作者
Paiman, S. [1 ]
Gao, Q. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
Pemasiri, K. [2 ]
Montazeri, M. [2 ]
Jackson, H. E. [2 ]
Smith, L. M. [2 ]
Yarrison-Rice, J. M. [3 ]
Zhang, X. [4 ,5 ]
Zou, J. [4 ,5 ]
机构
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA
[3] Miami Univ, Dept Phys, Oxford, OH 45056 USA
[4] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
基金
美国国家科学基金会; 澳大利亚研究理事会;
关键词
INDIUM-PHOSPHIDE NANOWIRES; III-V NANOWIRES; GAAS NANOWIRES; GROWTH MECHANISMS; BUILDING-BLOCKS; PHOTOLUMINESCENCE; SUPERLATTICES; IONICITY; DEFECTS; EPITAXY;
D O I
10.1088/0957-4484/20/22/225606
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
InP nanowires were grown on (1 1 1) B InP substrates by metal-organic chemical vapour deposition in the presence of colloidal gold particles as catalysts. Transmission electron microscopy and photoluminescence measurements were carried out to investigate the effects of V/III ratio and nanowire diameter on structural and optical properties. Results show that InP nanowires grow preferably in the wurtzite crystal structure than the zinc blende crystal structure with increasing V/III ratio or decreasing diameter. Additionally, time-resolved photoluminescence (TRPL) studies have revealed that wurtzite nanowires show longer recombination lifetimes of similar to 2500 ps with notably higher quantum efficiencies.
引用
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页数:7
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