Step-bunching in 6H-SiC growth by sublimation epitaxy

被引：21

作者：

Syväjärvi, M ^{[1
]}

Yakimova, R

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Okmet AB, S-17824 Ekero, Sweden

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1999年 / 11卷 / 49期

关键词：

D O I：

10.1088/0953-8984/11/49/319

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thick 6H-SiC epitaxial layers grown by sublimation epitaxy have been investigated concerning step-bunching. The macrostep appearances on the surfaces were studied for both (0001) Si and (000 (1) over bar) C faces. The surface structure on the Si face is less regular compared with the C face. Data on the steps have been collected and the step height shows a linear relation with the step width.

引用

页码：10019 / 10024

页数：6

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