Microstructure characterization of SiCl4-based microcrystalline silicon films by effusion of implanted helium

被引：4

作者：

Beyer, Wolthard ^{[1
]}

Carius, Reinhard ^{[1
]}

Zastrow, Uwe ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Photovolta, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

diffusion and transport; electrical and electronic properties; films and coatings; microstructure; microcrystallinity;

D O I：

10.1016/j.jnoncrysol.2005.10.029

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microcrystalline Si:Cl:H films prepared by plasma deposition using mixtures of silicon tetrachloride and hydrogen as process gases were studied by effusion of implanted helium. The temperature of maximum (low temperature) effusion rate is used as a measure of material density and microstructure. The results suggest that chlorine incorporation at concentrations exceeding a few percent results in a void-rich structure. High p-type conductivities obtained for boron-doped microcrystalline Si:Cl:H are explained by the presence of rather dense material with high crystalline fraction. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1402 / 1405

页数：4

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