Microstructure characterization of plasma-grown a-Si:H and related materials by effusion of implanted helium

被引：4

作者：

Beyer, W ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Photovoltaik, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.02.060

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The microstructure characterization of plasma-grown a-Si:H, a-Ge:H and related alloys by effusion of implanted helium is studied. Helium effusion transients give information on the microscopic material density and on the presence of isolated voids. The results show a more open microstructure for a-Ge:H than for a-Si:H for samples prepared at substrate temperatures T-S < 200 degreesC and a rather dense structure for both materials at high substrate temperatures. Isolated voids only are detected in a narrow substrate temperature interval. Effects of helium implantation dose, annealing and doping are discussed. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：232 / 235

页数：4

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