Differential reflectance spectroscopy of GaAs/GaAlAs at elevated temperatures

被引:12
作者
Kraisingdecha, P
Gal, M
机构
[1] School of Physics, University of New South Wales, Sydney
关键词
D O I
10.1063/1.117434
中图分类号
O59 [应用物理学];
学科分类号
摘要
Differential reflectance (DR), a contactless optical modulation technique, has been used to study GaAs/AlGaAs quantum wells and bulk GaAs, over a wide temperature range (77<T<600 K), The objective of this study was to demonstrate that DR, unlike most optical modulation spectroscopies, can be effectively and effortlessly used at elevated temperatures, and, thus, provide considerable potential for in situ monitoring. We have used DR to measure the temperature dependence of several critical points of GaAs and AlxGa1-xAs (x=0.31). (C) American Institute of Physics.
引用
收藏
页码:1355 / 1357
页数:3
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