Effect of doping concentration on device performances of triplet mixed host devices

被引：4

作者：

Kim, Sung Hyun ^{[2
]}

Jang, Jyongsik ^{[2
]}

Lee, Jun Yeob ^{[1
]}

机构：

[1] Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, Gyeonggi, South Korea

[2] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

来源：

SYNTHETIC METALS | 2009年 / 159卷 / 13期

关键词：

Triplet mixed host; Doping concentration; LIGHT-EMITTING-DIODES; ENERGY-TRANSFER; HIGH-EFFICIENCY; PHOSPHORESCENCE;

D O I：

10.1016/j.synthmet.2009.02.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Device performances of triplet mixed host devices were correlated with host composition and doping concentration. A mixed host of (4,4'-N,N'-dicarbazole)biphenyl (CBP) and spirobifluorene type host (PH1) was used and quantum efficiency of mixed host devices was optimized in CBP:PH1 (90:10) devices at all doping concentration. Quantum efficiency was not greatly affected by host composition at high doping concentration, while host composition was critical to quantum efficiency at low doping concentration. In addition, doping concentration had no influence on quantum efficiency of CBP:PHI (90: 10) devices. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1295 / 1297

页数：3

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