Nanomechanical response and creep behavior of electroless deposited copper films under nanoindentation test

被引:29
作者
Chang, Shou-Yi [1 ]
Lee, Yu-Shuien [1 ]
Chang, Ting-Kui [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 40227, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2006年 / 423卷 / 1-2期
关键词
nanoindentation; stress-strain curve; dislocations; creep;
D O I
10.1016/j.msea.2005.10.073
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The nanomechanical response and creep behavior of electroless plated copper (Cu) films have been investigated in this research by using a nanoindentation test. The hardness and elastic modulus of the nanostructural Cu films with a large amount of small grains in size of only 5 mn were measured as 1.5 and 120 GPa, respectively. The Cu films deformed elastically at first and then yielded at a stress of 3.3 GPa. Grain-boundary sliding and grain rotation were expected to dominate the deformation of the Cu films. The Cu films showed a creep strain rate of about 5 x 10(-5) s(-1) under the nanoindentation test, and the creep strain rate-stress relation exhibited a typical power law expression with a stress exponent of 6.4. The high creep strain rate but low stress exponent of the Cu films implied a fixed creep behavior consisting of grain-boundary sliding and grain rotation by the fast diffusion of Cu atoms through the large amount of grain-boundary. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 56
页数:5
相关论文
共 25 条
[1]   Damascene copper electroplating for chip interconnections [J].
Andricacos, PC ;
Uzoh, C ;
Dukovic, JO ;
Horkans, J ;
Deligianni, H .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :567-574
[2]  
[Anonymous], 1990, METALS HDB
[3]   Nanoindentating mechanical responses and interfacial adhesion strength of electrochemically deposited copper film [J].
Chang, SY ;
Chang, TK ;
Lee, YS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (10) :C657-C663
[4]   Mechanical property analyses of porous low-dielectric-constant films for stability evaluation of multilevel-interconnect structures [J].
Chang, SY ;
Chang, HL ;
Lu, YC ;
Jang, SM ;
Lin, SJ ;
Liang, MS .
THIN SOLID FILMS, 2004, 460 (1-2) :167-174
[5]   Integrated electrochemical deposition of copper metallization for ultralarge-scale integrated circuits [J].
Chang, SY ;
Lin, CW ;
Hsu, HH ;
Fang, JH ;
Lin, SJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (01) :C81-C88
[6]   Electrochemical deposition of nanoscaled palladium catalysts for 65 nm copper metallization [J].
Chang, SY ;
Hsu, CJ ;
Fang, RH ;
Lin, SJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (09) :C603-C607
[7]   Critical shear stress for onset of plasticity in a nanocrystalline Cu determined by using nanoindentation [J].
Chen, J ;
Wang, W ;
Qian, LH ;
Lu, K .
SCRIPTA MATERIALIA, 2003, 49 (07) :645-650
[8]  
COURTNEY TH, 1990, MECH BEHAV MAT, P80
[9]   Creep and strain burst in indium and aluminium during nanoindentation [J].
Feng, G ;
Ngan, AHW .
SCRIPTA MATERIALIA, 2001, 45 (08) :971-976
[10]  
Fischer-Cripps A.C., 2002, MECH ENG S