Electron spin resonance of erbium in gallium nitride

被引：14

作者：

Palczewska, M

Wolos, A

Kaminska, M

Grzegory, I

Bockowski, M

Krukowski, S

Suski, T

Porowski, S

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 01期

关键词：

semiconductors; crystal growth; impurities in semiconductors; electron states (localized); electron paramagnetic resonance;

D O I：

10.1016/S0038-1098(99)00572-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We performed electron spin resonance (ESR) measurements on Er-doped single GaN crystals synthesized from the solution of nitrogen in liquid gallium under high pressure of Na The axial Er3+ spectrum was observed with g(parallel to) = 2.861 +/- 0.003, g(perpendicular to) = 7.645 +/- 0.003, A(parallel to) = (110 +/- 5) x 10(-4)cm(-1), and A(perpendicular to) = (290 +/- 5) x 10(-4) cm(-1). The magnitude of an average g-factor g(av) = 1/3(g(parallel to) +/- 2g(perpendicular to)) was nearly equal to the g(Gamma(7)) ground state, as expected for Er3+ ions substituting for Ga in the GaN structure. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：39 / 42

页数：4

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