Field-Induced Carrier Delocalization in the Strain-Induced Mott Insulating State of an Organic Superconductor

被引：47

作者：

Kawasugi, Yoshitaka ^{[1
,2
]}

Yamamoto, Hiroshi M. ^{[2
]}

Tajima, Naoya ^{[2
]}

Fukunaga, Takeo ^{[2
]}

Tsukagoshi, Kazuhito ^{[3
]}

Kato, Reizo ^{[1
,2
]}

机构：

[1] Saitama Univ, Saitama 3388570, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] MANA, NIMS, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 11期

关键词：

2-DIMENSIONAL HUBBARD-MODEL; TRANSITIONS;

D O I：

10.1103/PhysRevLett.103.116801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor kappa-dBEDT-TTF2Cu[N(CN)(2)]Br. Conductivity obeys the formula for an activated transport sigma(square) = sigma(0) expd(W= k(B)T) where sigma(0) is a constant and W depends on the gate voltage. The gate-voltage dependence of the Hall coefficient shows that, unlike in conventional field-effect transistors, the effective mobility of dense hole carriers (similar to 1.6 x 10(14) cm(-2)) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

引用

页数：4

共 22 条

[1] Electrostatic modification of novel materials [J].

Ahn, C. H. ;

Bhattacharya, A. ;

Di Ventra, M. ;

Eckstein, J. N. ;

Frisbie, C. Daniel ;

Gershenson, M. E. ;

Goldman, A. M. ;

Inoue, I. H. ;

Mannhart, J. ;

Millis, Andrew J. ;

Morpurgo, Alberto F. ;

Natelson, Douglas ;

Triscone, Jean-Marc .

REVIEWS OF MODERN PHYSICS, 2006, 78 (04) :1185-1212

[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[3] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J].

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :705-707

[4]

Berciu M., 2009, Physics, V2, P55

[5] 2-DIMENSIONAL HUBBARD-MODEL - METAL-INSULATOR-TRANSITION STUDIED BY MONTE-CARLO CALCULATION [J].

FURUKAWA, N ;

IMADA, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1992, 61 (09) :3331-3354

[6] Direct Observation of d-Wave Superconducting Gap in κ-(BEDT-TTF)2Cu[N(CN)2]Br with Scanning Tunneling Microscopy [J].

Ichimura, Koichi ;

Takami, Makoto ;

Nomura, Kazushige .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2008, 77 (11)

[7] Metal-insulator transitions [J].

Imada, M ;

Fujimori, A ;

Tokura, Y .

REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263

[8] Electrostatic carrier doping to perovskite transition-metal oxides [J].

Inoue, IH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S112-S120

[9] Metal-insulator transition in κ-(ET)2X and (DCNQI)2M:: Two contrasting manifestation of electron correlation [J].

Kanoda, Kazushi .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (05)

[10] Strain-induced superconductor/insulator transition and field effect in a thin single crystal of molecular conductor [J].

Kawasugi, Yoshitaka ;

Yamamoto, Hiroshi M. ;

Hosoda, Mutsumi ;

Tajima, Naoya ;

Fukunaga, Takeo ;

Tsukagoshi, Kazuhito ;

Kato, Reizo .

APPLIED PHYSICS LETTERS, 2008, 92 (24)

← 1 2 3 →