Aging behavior and recovery of polarization in Sr0.8Bi2.4Ta2O9 thin films

被引:15
作者
Chen, SY [1 ]
Lee, VC [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.372298
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric thin films of bismuth-containing layered perovskite Sr0.8Bi2.4Ta2O9 (SBT) have been prepared by both metalorganic decomposition (designated as MOD-SBT film) and magnetron sputtering (designated as sputtering-SBT film) processes. SBT thin films are well known to exhibit free-fatigue behavior with electrical field cycling. However, it was found that after the SBT films were applied with electrical field display, the polarization reduction with time was observed. The aging rate was related to microstructure, which in turn was dependent on the film processing. The sputtering-SBT films show a slower degradation rate than MOD-SBT films. The suppressed polarization can be near-completely recovered by applying either thermal treatment above 150 degrees C or electric-field cycling. There exists a minimum required thermal energy to restore the polarization. The easy recovery exhibited by SBT films in suppressed polarization reveals that a relatively weak domain pinning may exist between domain wall and electronic defects in SBT. The SBT shows little fatigue behavior during electric field cycling but exhibits an aging phenomenon after applied electric field. (C) 2000 American Institute of Physics. [S0021-8979(00)04906-9].
引用
收藏
页码:3050 / 3055
页数:6
相关论文
共 26 条
[21]   Dielectric anomaly in strontium bismuth tantalate thin films [J].
Takemura, K ;
Noguchi, T ;
Hase, T ;
Miyasaka, Y .
APPLIED PHYSICS LETTERS, 1998, 73 (12) :1649-1651
[22]   Effect of bismuth content on the properties of Sr0.8BixTa1.2 Nb0.9O9+y ferroelectric thin films [J].
Tsai, HM ;
Lin, P ;
Tseng, TY .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1095-1100
[23]  
Tuttle BA., 1987, MRS BULL, V12, P40, DOI 10.1557/S0883769400066938
[24]   AGING CHARACTERISTICS IN PEROVSKITE-TYPE FERROELECTRIC CERAMICS [J].
UCHIDA, N ;
IKEDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (10) :1219-&
[25]   ELECTRONIC DOMAIN PINNING IN PB(ZR,TI)O3 THIN-FILMS AND ITS ROLE IN FATIGUE [J].
WARREN, WL ;
DIMOS, D ;
TUTTLE, BA ;
NASBY, RD ;
PIKE, GE .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :1018-1020
[26]  
Yoo I. K., 1993, INTEGR FERROELECTR, V3, P365