Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

被引：98

作者：

Zhang, T. C. ^{[1
]}

Guo, Y. ^{[1
]}

Mei, Z. X. ^{[1
]}

Gu, C. Z. ^{[1
]}

Du, X. L. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 11期

基金：

美国国家科学基金会;

关键词：

elemental semiconductors; magnesium compounds; molecular beam epitaxial growth; photodetectors; rectification; semiconductor growth; semiconductor heterojunctions; silicon; ultraviolet detectors; wide band gap semiconductors; zinc compounds; ZNO;

D O I：

10.1063/1.3103272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of similar to 10(4) at +/- 2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated.

引用

页数：3

共 15 条

[1] Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Johnstone, D ;

Avrutin, V ;

Onojima, N ;

Liu, C ;

Xie, J ;

Fan, Q ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[2] Application of sol-gel derived films for ZnO/n-Si junction solar cells [J].

Baik, DG ;

Cho, SM .

THIN SOLID FILMS, 1999, 354 (1-2) :227-231

[3] Photoemission studies of the interface formation of ultrathin MgO dielectric layers on the oxidised Si(111) surface [J].

Brennan, B. ;

McDonnell, S. ;

Hughes, G. .

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100

[4] Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure [J].

Jeong, IS ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2946-2948

[5] ZnO Schottky ultraviolet photodetectors [J].

Liang, S ;

Sheng, H ;

Liu, Y ;

Huo, Z ;

Lu, Y ;

Shen, H .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :110-113

[6] ZnO MSM photodetectors with Ru contact electrodes [J].

Lin, TK ;

Chang, SJ ;

Su, YK ;

Huang, BR ;

Fujita, M ;

Horikoshi, Y .

JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) :513-517

[7] P-type ZnO by Sb doping for PN-junction photodetectors [J].

Liu, J. L. ;

Xiu, F. X. ;

Mandalapu, L. J. ;

Yang, Z. .

ZINC OXIDE MATERIALS AND DEVICES, 2006, 6122

[8] Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction [J].

Mridha, S. ;

Basak, D. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)

[9] Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO [J].

Ohta, H ;

Hirano, M ;

Nakahara, K ;

Maruta, H ;

Tanabe, T ;

Kamiya, M ;

Kamiya, T ;

Hosono, H .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :1029-1031

[10] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS [J].

PAOLI, TL ;

BARNES, PA .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :714-716

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