P-type ZnO by Sb doping for PN-junction photodetectors

被引：7

作者：

Liu, J. L. ^{[1
]}

Xiu, F. X. ^{[1
]}

Mandalapu, L. J. ^{[1
]}

Yang, Z. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

ZINC OXIDE MATERIALS AND DEVICES | 2006年 / 6122卷

关键词：

ZnO; Sb doping; photoluminescence; Hall effect; homojunction; heterojunction; photodetector;

D O I：

10.1117/12.649571

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sb-doped p-type ZnO films were grown on n-Si (100) by electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). Room temperature Hall effect measurements reveal that a heavily Sb-doped ZnO sample exhibits a low resistivity of 0.2 Omega cm, high hole concentration of 1.7 x 10(18) cm(3), and high mobility of 20.0 cm(2)/V s. Low-temperature photoluminescence (PL) measurements show an Sb-associated acceptor-bound exciton (A degrees X) emission exists at 3.358 eV at 8.5 K. The acceptor energy level of the Sb dopant is estimated to be 0.14 eV above the valence band. Based on these electrical and optical properties, p-n hetero- and homojunction photodetectors employing Sb-doped p-type ZnO films were designed and fabricated. The heterojunction photodiode consists of Sb-doped p-type ZnO grown on n-Si (100) substrate. An Sb-doped p-type ZnO layer with an n-type Ga-doped ZnO layer was grown on a p-Si (111) substrate to form the homojunction. Current-Voltage (I-V) characterizations reveal rectifying characteristics. Good photoresponse to UV light has been demonstrated for both hetero and homojunction photodetectors.

引用

页数：7

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