Two-subband-populated AlGaN/GaN heterostructures probed by electrically detected and microwave-modulated magnetotransport measurements

被引：13

作者：

Hang, D. R. ^{[1
]}

Huang, C. F.

Chen, Y. F.

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Ind Technol Res Inst, Ctr Measurement Stand, Natl Measurement Lab, Hsinchu 300, Taiwan

[4] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

关键词：

D O I：

10.1063/1.2339030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors apply the microwave-modulated technique to study the transport properties of two-subband-populated AlGaN/GaN heterostructures. The microwave modulation enhances the small Shubnikov-de Haas oscillations at low magnetic fields, providing a direct way to compare the mobilities of different subbands from the experimental data. In addition, this technique can help us to determine the subband-energy separation, especially when the population of the second subband is much lower than that of the first one. Variation of subband-energy separation due to different spacer thicknesses is obtained. Therefore, the authors showed a powerful way to probe parameters of two-subband-populated AlGaN/GaN heterostructures. (c) 2006 American Institute of Physics.

引用

页数：3

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