Impurities on graphene: Midgap states and migration barriers

被引:177
作者
Wehling, T. O. [1 ]
Katsnelson, M. I. [2 ]
Lichtenstein, A. I. [1 ]
机构
[1] Univ Hamburg, Inst Theoret Phys 1, D-20355 Hamburg, Germany
[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands
关键词
adsorption; binding energy; energy gap; graphene; impurity states; topology; GENERALIZED GRADIENT APPROXIMATION; AUGMENTED-WAVE METHOD; ULTRASOFT PSEUDOPOTENTIALS; ELECTRON-SCATTERING; SUSPENDED GRAPHENE; MOLECULES; TRANSPORT; CARBON; ATOMS; GAS;
D O I
10.1103/PhysRevB.80.085428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monovalent impurities on graphene can be divided into ionically and covalently bond impurities. The covalent impurities with one chemically active electron cause universal midgap states as the carbon atom next to the impurity is effectively decoupled from the graphene pi bands. The electronic structure of graphene suppresses migration of these impurities and makes the universal midgap very stable. This effect is strongest for neutral covalently bond impurities. The ionically bond impurities have migration barriers of typically less than 0.1 eV, which is about an order of magnitude less than their typical binding energies. An asymmetry between anions and cations regarding their adsorption sites and topology of their potential-energy landscape is predicted. In addition, the migration barrier for oxygen adatoms on graphene and their electronic structure is discussed. The barrier is found to be similar to that of monovalent covalently bond impurities.
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页数:7
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