ZnO thin film grown on silicon by metal-organic chemical vapor deposition

被引：31

作者：

Wang, XQ

Yang, SR

Yang, XT

Liu, D

Zhang, YT

Wang, JH

Yin, JZ

Liu, DL

Ong, HC

Du, GT ^{[1
]}

机构：

[1] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 01期

基金：

中国国家自然科学基金;

关键词：

metalorganic chemical vapor deposition; oxides; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)01372-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We deposited ZnO thin films on (00 1) Si substrate by metal-organic chemical vapor deposition. We found strong diffraction (0 0 2) peak at 34.76degrees and (0 0 4) peak at 72.84degrees indicating that ZnO thin film was strongly C-oriented. The full-width at half-maximum of (0 0 2) peak was 0.19degrees. ZnO film was highly transparent with a transmission ratio larger than 80% in the visible range. Ultraviolet emission was observed while deep level emission could hardly been observed in room temperature photoluminescence spectra. From temperature-dependent spectra of 300-80 K, we could observe neutral donor (DdegreesX) bound exciton emission clearly and free-exciton emission dominated the spectrum when the temperature was above 220 K. X-ray photoemission spectra showed that ZnO film was Zn-rich with O:Zn = 0.93:1. (C) 2002 Published by Elsevier Science B.V.

引用

页码：13 / 18

页数：6

共 17 条

[1] ZnO diode fabricated by excimer-laser doping [J].