The influence of feature sidewall tolerance on minimum absorber thickness for LIGA x-ray masks

被引:10
作者
Griffiths, SK [1 ]
Hruby, JM [1 ]
Ting, A [1 ]
机构
[1] Sandia Natl Labs, Livermore, CA 94551 USA
关键词
D O I
10.1088/0960-1317/9/4/311
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Minimizing mask absorber thickness is an important practical concern in producing very small features by the LIGA dagger process. To assist in this minimization, we have developed coupled numerical models describing both the exposure and development of a thick polymethyl methacrylate (PMMA) resist. The exposure model addresses multi-wavelength, one-dimensional x-ray transmission through multiple beam filters, through the mask substrate and absorber, and the subsequent attenuation and photon absorption in the PMMA resist. The development model describes one-dimensional dissolution of a feature and its sidewalls, taking into account the variation in absorbed dose through the PMMA thickness. These exposure and development models are coupled in a single interactive code, permitting the automated adjustment of mask absorber thickness to yield a prescribed sidewall taper or dissolution distance. We have used this tool to compute the minimum required absorber thickness yielding a prescribed sidewall tolerance for exposures performed at the ALS, SSRL and NSLS synchrotron sources. Results are presented as a function of the absorbed dose for a range of the prescribed sidewall tolerance, feature size, PMMA thickness, mask substrate thickness and the development temperature.
引用
收藏
页码:353 / 361
页数:9
相关论文
共 14 条
[1]  
[Anonymous], HDB SYNCHROTRON RA A
[2]  
Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3
[3]  
Biggs F., 1988, SAND870070 SAND NAT
[4]  
Clough R.L., 1996, IRRADIATION POLYM FU
[5]  
FREIERTAG G, 1998, J MICROMECH MICROENG, V7, P323
[6]   Transport limitations in electrodeposition for LIGA microdevice fabrication [J].
Griffiths, SK ;
Nilson, RH ;
Bradshaw, RW ;
Ting, A ;
Bonivert, WD ;
Hachman, JT ;
Hruby, JM .
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IV, 1998, 3511 :364-375
[7]  
Kirkaldy J.S., 1987, DIFFUSION CONDENSED
[8]   X-Ray masks for very deep X-Ray lithography [J].
Klein, J ;
Guckel, H ;
Siddons, DP ;
Johnson, ED .
MICROSYSTEM TECHNOLOGIES, 1998, 4 (02) :70-73
[9]   Resist dissolution rate and inclined-wall structures in deep x-ray lithography [J].
Liu, Z ;
Bouamrane, F ;
Roulliay, M ;
Kupka, RK ;
Labèque, A ;
Megtert, S .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1998, 8 (04) :293-300
[10]  
Munchmeyer D., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V803, P72, DOI 10.1117/12.941277