Resist dissolution rate and inclined-wall structures in deep x-ray lithography

被引:24
作者
Liu, Z [1 ]
Bouamrane, F [1 ]
Roulliay, M [1 ]
Kupka, RK [1 ]
Labèque, A [1 ]
Megtert, S [1 ]
机构
[1] Lab Utilisat Rayonnement Electromagnet, UPS, F-91405 Orsay, France
关键词
D O I
10.1088/0960-1317/8/4/006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the chemical dissolution rate of PMMA resist (polymethylmethacrylate) in the case of deep x-ray lithography with the aim of intentionally producing microstructures with inclined side walls. This can be achieved by controlling the dose distributions and their related dissolution rates in both exposed and shaded areas. We specialize in the fabrication of pyramidal microstructures using thin mask absorber patterns. Controlling dissolution conditions in the developer bath such as bath temperature or stirring, microstructure aspect ratios are investigated.
引用
收藏
页码:293 / 300
页数:8
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