High growth rate MWPECVD of single crystal diamond

A key limitation to the development of homoepitaxial films for device applications has been the low growth rates achieved under standard growth conditions (typically approx. 1 mum/h). In this paper growth rates as high as 50 mum/h are demonstrated, using higher pressure conditions than normal, along with modified growth gas mixtures and substrate holder. This has been achieved without the intentional addition of nitrogen, which is known affect the electronic properties of diamond in a negative way. Films produced using this approach display surface conductivity, not seen when significant nitrogen contamination is present, and display excellent electronic properties. (C) 2004 Elsevier B.V. All rights reserved.