Maskless and targeted creation of arrays of colour centres in diamond using focused ion beam technology

被引:48
作者
Lesik, Margarita [1 ,2 ,3 ]
Spinicelli, Piernicola [1 ]
Pezzagna, Sebastien [1 ]
Happel, Patrick [1 ]
Jacques, Vincent [2 ,3 ]
Salord, Olivier [4 ]
Rasser, Bernard [4 ]
Delobbe, Anne [4 ]
Sudraud, Pierre [4 ]
Tallaire, Alexandre [5 ,6 ]
Meijer, Jan [7 ]
Roch, Jean-Francois [2 ,3 ]
机构
[1] Ruhr Univ Bochum, RUBION, D-44780 Bochum, Germany
[2] Univ Paris 11, CNRS, Aime Cotton Lab, F-91405 Orsay, France
[3] ENS Cachan, F-91405 Orsay, France
[4] Orsay Phys SA, F-13710 Fuveau, France
[5] CNRS, Lab Sci Proc & Mat, F-93340 Villetaneuse, France
[6] Univ Paris 13, F-93340 Villetaneuse, France
[7] Univ Leipzig, Dept Nucl Solid State Phys, D-04103 Leipzig, Germany
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 10期
关键词
diamond; focused ion beam; ion implantation; nitrogen-vacancy; ROOM-TEMPERATURE; SINGLE; IMPLANTATION; SPINS; ENTANGLEMENT; GENERATION; QUBITS;
D O I
10.1002/pssa.201300102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The creation of nitrogen-vacancy (NV) centres in diamond is nowadays well controlled using nitrogen implantation and annealing. Although the high-resolution placement of NV centres has been demonstrated using either collimation through pierced tips of an atomic force microscope (AFM) or masks with apertures made by electron beam lithography, a targeted implantation into pre-defined structures in diamond may not be achieved using these techniques. We show that a beam of nitrogen ions can be focused to approximately 100nm using focused ion beam (FIB) technology. The nitrogen ion beam is produced using an electron cyclotron resonance (ECR) plasma source. Combined with a scanning electron microscope, the nitrogen-FIB offers new possibilities for the targeted creation of single defects in diamond. This maskless technology is suitable for example for the creation of optical centres in the cavities of photonic crystals or in diamond tips for scanning magnetometry.
引用
收藏
页码:2055 / 2059
页数:5
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