共 11 条
[1]
ADACHI S, 1982, J APPL PHYS, V53, P5683
[2]
ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1993, 32 (7B)
:L1000-L1002
[3]
EDGAR JH, 1992, PROPERTIES GROUP 3 N
[4]
CATHODOLUMINESCENCE PROPERTIES OF UNDOPED AND ZN-DOPED ALXGA1-XN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1991, 30 (08)
:1604-1608
[6]
REFRACTIVE-INDEXES OF WURTZITE AND ZINCBLENDE GAN
[J].
ELECTRONICS LETTERS,
1993, 29 (20)
:1759-1761
[8]
REFRACTION INDEX MEASUREMENTS ON AIN SINGLE CRYSTALS
[J].
PHYSICA STATUS SOLIDI,
1966, 14 (01)
:K5-+
[9]
GAN, AIN, AND INN - A REVIEW
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1992, 10 (04)
:1237-1266