Local structure around Mn in ferromagnetic GaMnN film studied by X-ray absorption fine structure

被引：27

作者：

Sato, M ^{[1
]}

Tanida, H

Kato, K

Sasaki, T

Yamamoto, Y

Sonoda, S

Shimizu, S

Hori, H

机构：

[1] Japan Synchrotron Radiat Res Inst, Mikazuki, Hyogo 6795198, Japan

[2] ULVAC Inc, Chigasaki, Kanagawa 2538543, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 7A期

关键词：

XAFS; diluted magnetic semiconductor; GaMnN; GaN;

D O I：

10.1143/JJAP.41.4513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local structure of the Mn in a GaMnN film was investigated using extended X-ray absorption fine structure (EXAFS) analysis. This GaMnN film shows ferromagnetism with an extremely high Curie temperature above 740 K. We carried out EXAFS measurement of the K-edge of the Mn and Ga in this sample using a fluorescence-yield mode. The local structure of the atoms around the Mn is in good agreement with that around Ga, indicating that the Mn atoms substitute for Ga in GaN.

引用

页码：4513 / 4514

页数：2

共 12 条

[1] Growth and characterization of low-temperature grown GaN with high Fe doping [J].

Akinaga, H ;

Németh, S ;

De Boeck, J ;

Nistor, L ;

Bender, H ;

Borghs, G ;

Ofuchi, H ;

Oshima, M .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4377-4379

[2]

Balkas C., 1995, POWDER DIFFR, V10, P266

[3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[4]

HORI H, UNPUB PHYSICA B

[5] Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].

Matsukura, F ;

Ohno, H ;

Shen, A ;

Sugawara, Y .

PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040

[6] IMPROVED ABINITIO CALCULATIONS OF AMPLITUDE AND PHASE FUNCTIONS FOR EXTENDED X-RAY ABSORPTION FINE-STRUCTURE SPECTROSCOPY [J].

MCKALE, AG ;

VEAL, BW ;

PAULIKAS, AP ;

CHAN, SK ;

KNAPP, GS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (12) :3763-3768

[7] MAGNETIC STUDY ON MN4N AND ITS RELATED COMPOUNDS [J].

MEKATA, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (05) :796-&

[8] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[9] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[10] MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

OHNO, H ;

MUNEKATA, H ;

PENNEY, T ;

VONMOLNAR, S ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1992, 68 (17) :2664-2667

← 1 2 →