Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

被引：31

作者：

Ryu, H. Y.

Ha, K. H.

Chae, J. H.

Kim, K. S.

Son, J. K.

Nam, O. H.

Park, Y. J.

Shim, J. I.

机构：

[1] Samsung Adv Inst Technol, Display Device & Mat Lab, Suwon 440600, South Korea

[2] Hanyang Univ, Dept Elect Engn, Ansan 425791, Kyunggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 17期

关键词：

D O I：

10.1063/1.2364273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of similar to 3 mA at a high temperature of 80 degrees C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density. (c) 2006 American Institute of Physics.

引用

页数：3

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