High-power and wide wavelength range GaN-based laser diodes

被引：43

作者：

Kozaki, Tokuya ^{[1
]}

Matsumura, Hiroaki ^{[1
]}

Sugimoto, Yasunobu ^{[1
]}

Nagahama, Shin-ichi ^{[1
]}

Mukai, Takashi ^{[1
]}

机构：

[1] Nichia Corp, Optoelect Prod Div, LD Dev Dept, 491 Oka, Tokushima 7748601, Japan

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS V | 2006年 / 6133卷

关键词：

InGaN; high-power lasers; ultraviolet; blue-LDs; n-type GaN substrate;

D O I：

10.1117/12.641460

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Since the first demonstration of a pulsed InGaN laser diodes (LDs) grown on sapphire substrate in 1995, we have been developing longer lifetime and higher optical output power LDs in the 400 - 410 nm wavelength range. Moreover, we have already succeeded in the expansion of the lasing wavelength range from ultraviolet (UV) to blue-green. In this paper, we reported the recent progress of high-power and wide wavelength range GaN-based LDs with an optical output power of 20 mW single mode (375nm), 160 mW single mode (405nm), 200 mW multi mode (405nm), 50 mW single mode (445nm), 300 mW multi mode (445nm), and 20 mW single mode (473nm).

引用

页数：12

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