Over 100-mW blue-violet laser diodes for Blu-ray Disc system

被引：34

作者：

Asano, T ^{[1
]}

Takeya, P ^{[1
]}

Mizuno, T ^{[1
]}

Ikeda, S ^{[1
]}

Ohfuji, Y ^{[1
]}

Fujimoto, T ^{[1
]}

Oikawa, K ^{[1
]}

Goto, S ^{[1
]}

Hashizu, T ^{[1
]}

Aga, K ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Corp, MSNC, DSC, Semicond Laser Div,Shinagawa Ku, Tokyo 1400002, Japan

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS III | 2004年 / 5365卷

关键词：

GaN-based lasers; blue-violet lasers; Blu-ray Disc; kink; COD;

D O I：

10.1117/12.533187

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the ridge width was as narrow as 1.4 mum, was applied to realize the stable lateral-mode operation. A layer structure around the active layer was carefully designed so as to ensure a high COD level. The lasers have been operated stably for more than 500 h under 130-mW pulsed operation at 60 degreesC. From ambient temperature dependence of the device lifetime, the empirical activation energy was estimated as 0.32 eV. These results indicate that this LD is suitable for next-generation Blu-ray Disc system.

引用

页码：297 / 305

页数：9

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