100-mW kink-free blue-violet laser diodes with low aspect ratio

被引：51

作者：

Asano, T ^{[1
]}

Tojyo, T ^{[1
]}

Mizuno, T ^{[1
]}

Takeya, M ^{[1
]}

Ikeda, S ^{[1
]}

Shibuya, K ^{[1
]}

Hino, T ^{[1
]}

Uchida, S ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Shiroishi Semicond Inc, Dev Ctr, Miyagi 9890734, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 01期

关键词：

laser measurements; laser modes; laser noise; laser reliability; materials science and technology; optical device fabrication; semiconductor lasers;

D O I：

10.1109/JQE.2002.806213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully fabricated for the first time. A new ridge structure, in which the outside of the ridge is covered with a stacked layer of Si on SiO2 and the ridge width is as narrow as 1.5 mum, is applied to realize high kink-free output power with a wide beam divergence angle parallel to the junction plane. A new layer structure around the active layer is demonstrated to be quite effective for obtaining narrow beam divergence angle perpendicular to the junction plane, maintaining low threshold current. Ten LDs with low aspect ratio have been operated stably for over 1000 h under 30-mW continuous-wave operation at 60 degreesC. Relative intensity noise measured under optical feedback with high-frequency modulation is as low as -125 dB/Hz. These results indicate that this LD is suitable for next-generation high-density optical storage systems.

引用

页码：135 / 140

页数：6

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