High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

被引：53

作者：

Asano, T ^{[1
]}

Takeya, M ^{[1
]}

Tojyo, T ^{[1
]}

Mizuno, T ^{[1
]}

Ikeda, S ^{[1
]}

Shibuya, K ^{[1
]}

Hino, T ^{[1
]}

Uchida, S ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Shiroishi Semicond Inc, Dev Ctr, Shiroishi, Miyagi 9890734, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期

关键词：

D O I：

10.1063/1.1478157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power blue-violet laser diodes with aspect ratio as low as 2.3 and threshold current down to 33 mA have been realized. The relationship between threshold current and optical confinement factor was investigated in order to minimize the beam divergence angle perpendicular to the junction plane (theta(perpendicular to)). theta(perpendicular to) was found to decrease with reduction of the optical confinement factor, whereas threshold current density increased. A new layer structure, in which a p-typed cladding layer was located next to an AlGaN electron blocking layer, and a GaInN guiding layer was inserted between the active and the AlGaN electron blocking layer, was effective for obtaining small theta(perpendicular to) while maintaining low threshold current. (C) 2002 American Institute of Physics.

引用

页码：3497 / 3499

页数：3

共 11 条

[1]

ASANO T, 2001, MRS FALL M BOST MA

[2] Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact [J].

Kuramoto, M ;

Sasaoka, C ;

Hisanaga, Y ;

Kimura, A ;

Yamaguchi, AA ;

Sunakawa, H ;

Kuroda, N ;

Nido, M ;

Usui, A ;

Mizuta, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B) :L184-L186

[3] High-power and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates [J].

Nagahama, S ;

Iwasa, N ;

Senoh, M ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H ;

Kozaki, T ;

Sano, M ;

Matsumura, H ;

Umemoto, H ;

Chocho, K ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (7A) :L647-L650

[4] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[5] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

[6] AlGaInN high-power lasers grown on an ELO-GaN layer [J].

Takeya, M ;

Yanashima, K ;

Asano, T ;

Hino, T ;

Ikeda, S ;

Shibuya, K ;

Kijima, S ;

Tojyo, T ;

Ansai, S ;

Uchida, S ;

Yabuki, Y ;

Aoki, T ;

Asatsuma, T ;

Ozawa, M ;

Kobayashi, T ;

Morita, E ;

Ikeda, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) :646-651

[7]

TAKEYA M, 2001, ISCS 2001 TOK JAP

[8] GaN-based high power blue-violet laser diodes [J].

Tojyo, T ;

Asano, T ;

Takeya, M ;

Hino, T ;

Kijima, S ;

Goto, S ;

Uchida, S ;

Ikeda, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A) :3206-3210

[9]

TOJYO T, IN PRESS

[10]

USUI A, 1997, JPN J APPL PHYS, V36, pL889

← 1 2 →