ACCELERATED AGING FOR ALGAINP VISIBLE LASER-DIODES

被引：17

作者：

ENDO, K

KOBAYASHI, K

FUJII, H

UENO, Y

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba 305

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Accelerated aging tests were carried out under constant current conditions at an ambient temperature range of 100-150 degrees C for 670 Mn band AlGaInP visible laser diodes. A degradation rate activation energy of 0.8 eV and an extrapolated lifetime of 10(6) h at 50 degrees C has been obtained. It is reported for the first time that lasing wavelength shifts of up to 20 nm to shorter wavelengths accompanied the threshold current increase. This is attributed to disordering of the natural superlattice in the GaInP active layer.

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页码：146 / 148

页数：3

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