Potentiometric measurements of the spin-split subbands in a two-dimensional electron gas

被引：71

作者：

Hammar, PR ^{[1
]}

Johnson, M ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.61.7207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The density of states of carriers in a high-mobility InAs single quantum well is spin split by the Rashba effect. The asymmetry favors down-spin states for carriers with positive momentum and up-spin states for carriers with negative momentum. Imposing a bias current causes inequivalent shifts of the spin subband chemical potential, which are detected using a ferromagnetic film electrode and an open circuit voltage measurement. Measurements made on three samples over a range 77<T<296 K demonstrate spin detection at a ferromagnet-simiconductor interface and corroborate earlier experimental results of spin-dependent interfacial resistance.

引用

页码：7207 / 7210

页数：4

共 14 条

[1]

ARONOV AG, 1976, SOV PHYS SEMICOND+, V10, P698

[2]

BYCHKOV YA, 1984, JETP LETT+, V39, P78

[3] Fabrication of spin-current field-effect transistor structures [J].