Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

被引:26
作者
Abrutis, A
Hubert-Pfalzgraf, LG
Pasko, SV
Bartasyte, A
Weiss, F
Janickis, V
机构
[1] Vilnius State Univ, Dept Chem, LT-01513 Vilnius, Lithuania
[2] Univ Lyon 1, IRC, UPR 5401, F-69626 Villeurbanne, France
[3] ENSPG, INPG, LMGP, UMR 5628, F-38402 St Martin Dheres, France
[4] Kaunas Technol Univ, Fac Chem Technol, LT-3028 Kaunas, Lithuania
关键词
metalorganic chemical vapor deposition; hafnium; metalorganic compounds; oxides;
D O I
10.1016/j.jcrysgro.2004.04.012
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The reaction between hafnium tetrachloride and neopentyl alcohol in the presence of ammonia lead to hafnium oxoneopentoxide (1). 1 was characterized by FT-IR, H-1 and C-13 NMR. Single-crystal X-ray diffraction identified it as a trinuclear oxo species Hf-3(mu(3)-O)(mu(3)-ONep)(mu-ONeP)(3)(ONeP)(6). The oxoneopentoxide has been used as precursor for the growth of HfO2 films by pulsed liquid injection MOCVD. The influence of deposition temperature (320-750degreesC) on film growth rate, roughness and microstructure was studied and compared with the conventional Hf(thd)(4) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor. Depending on the deposition temperature, amorphous, polycrystalline or epitaxial films can be obtained on sapphire (R-plane) substrates. The film growth rate was independent of the deposition temperature in the range 350-750degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:529 / 537
页数:9
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