Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

被引：26

作者：

Abrutis, A

Hubert-Pfalzgraf, LG

Pasko, SV

Bartasyte, A

Weiss, F

Janickis, V

机构：

[1] Vilnius State Univ, Dept Chem, LT-01513 Vilnius, Lithuania

[2] Univ Lyon 1, IRC, UPR 5401, F-69626 Villeurbanne, France

[3] ENSPG, INPG, LMGP, UMR 5628, F-38402 St Martin Dheres, France

[4] Kaunas Technol Univ, Fac Chem Technol, LT-3028 Kaunas, Lithuania

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 267卷 / 3-4期

关键词：

metalorganic chemical vapor deposition; hafnium; metalorganic compounds; oxides;

D O I：

10.1016/j.jcrysgro.2004.04.012

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The reaction between hafnium tetrachloride and neopentyl alcohol in the presence of ammonia lead to hafnium oxoneopentoxide (1). 1 was characterized by FT-IR, H-1 and C-13 NMR. Single-crystal X-ray diffraction identified it as a trinuclear oxo species Hf-3(mu(3)-O)(mu(3)-ONep)(mu-ONeP)(3)(ONeP)(6). The oxoneopentoxide has been used as precursor for the growth of HfO2 films by pulsed liquid injection MOCVD. The influence of deposition temperature (320-750degreesC) on film growth rate, roughness and microstructure was studied and compared with the conventional Hf(thd)(4) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor. Depending on the deposition temperature, amorphous, polycrystalline or epitaxial films can be obtained on sapphire (R-plane) substrates. The film growth rate was independent of the deposition temperature in the range 350-750degreesC. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：529 / 537

页数：9

共 29 条

[1] Magnetoresistant La1-xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition:: effect of deposition conditions, substrate material and film thickness [J].