Low-frequency magnetic noise in magnetic tunnel junctions

被引：54

作者：

Ren, C ^{[1
]}

Liu, XY ^{[1
]}

Schrag, BD ^{[1
]}

Xiao, G ^{[1
]}

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.69.104405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied low-frequency noise in NiFe-Al2O3-NiFe based magnetic tunnel junctions (MTJ's) with and without a hard-axis bias field. The 1/f noise is observed to be magnetic-field dependent and reduced with the application of hard-axis bias fields, attributed to thermally activated magnetization fluctuations in the magnetic electrodes. A linear dependence of noise on derivative of magnetoresistance has been observed, and the magnetic-field noise for MTJ sensing elements is defined and evaluated to be as low as 60 nT mum/Hz(1/2).

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页数：5

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