Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

被引：96

作者：

Suresh, Arun ^{[1
]}

Novak, Steven ^{[1
]}

Wellenius, Patrick ^{[1
]}

Misra, Veena ^{[1
]}

Muth, John F. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept ECE, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 12期

基金：

美国国家科学基金会;

关键词：

electron traps; gallium compounds; indium compounds; platinum; random-access storage; semiconductor materials; semiconductor thin films; thin film transistors; NANOCRYSTALS; TEMPERATURE; FABRICATION;

D O I：

10.1063/1.3106629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium. The transfer characteristics of the device show a large clockwise hysteresis due to electron trapping and are attributed to the platinum nanoparticles. Effect of the gate bias stress (program voltage) magnitude, duration, and polarity on the memory window characteristics has been studied. Charge retention measurements were carried out and a loss of less than 25% of the trapped elec-trons was observed over 10(4) s indicating promising application as nonvolatile memory.

引用

页数：3

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