Growth and characterization of Sb-based heterostructures grown by LP-MOVPE

被引：9

作者：

Tummler, J

Woitok, J

Hermans, J

Geurts, J

Schneider, P

Moulin, D

Behet, M

Heime, K

机构：

[1] RHEIN WESTFAL TH AACHEN, INST PHYS 1, D-52056 AACHEN, GERMANY

[2] RHEIN WESTFAL TH AACHEN, INST HALBLEITERTECH 1, D-52056 AACHEN, GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00531-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaSb/AlSb, InAs/AlSb and InAs/InP0.69Sb0.31 multi-quantum well structures were grown successfully by metalorganic vapor phase epitaxy. The good structural and optical quality was characterized by a combination of Raman spectroscopy and X-ray diffractometry. For the GaSb/AlSb structures an unintentional incorporation of some percent Alin the GaSb well and of Ga in AlSb barrier layers was identified. At the interfaces of the material systems InAs/AlSb and InAs/InP0.69Sb0.31 our studies revealed the existence of InAsSb layers, which are explained in terms of the surfactant effect of Sb. The thickness and composition of these interlayers depend strongly on the InAs growth rate.

引用

页码：772 / 776

页数：5

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