Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride

被引：83

作者：

Boyen, HG ^{[1
]}

Widmayer, P ^{[1
]}

Schwertberger, D ^{[1
]}

Deyneka, N ^{[1
]}

Ziemann, P ^{[1
]}

机构：

[1] Univ Ulm, Abt Festkorperphys, D-89069 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the bombardment of high quality cubic (c-) BN films with 300 keV Ar+ ions leads to a strong relaxation of their compressive stresses without destroying the cubic phase if the total ion fluence is kept below an upper limit. In addition, it was found that on top of such a stress-relieved film a further pure c-BN layer can be grown, but it builds up compressive stress again. Based on both results, a procedure is developed to grow thick (> 1 mu m) c-BN films (> 80% c-BN) exhibiting low residual stress and long term stability under ambient conditions. (C) 2000 American Institute of Physics. [S0003-6951(00)01406-6].

引用

页码：709 / 711

页数：3

共 16 条

[1] Influence of the deposition parameters on boron nitride growth mechanisms in a hollow cathode are evaporation device [J].