Innovative localized lifetime control in high-speed IGBT's

被引:41
作者
Saggio, M [1 ]
Raineri, V [1 ]
Letor, R [1 ]
Frisina, F [1 ]
机构
[1] CNR,IMETEM,I-95121 CATANIA,ITALY
关键词
D O I
10.1109/55.596928
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An innovative method to control carrier lifetime locally and efficiently in Insulated Gate Bipolar Transistors (IGBT's) is presented. It is based on the formation of void layers by low-energy and high-dose He implants and annealing. Voids introduce two well-defined midgap trap levels in silicon. HFIELDS simulations demonstrate the increase of surface hole concentration when a well localized recombination region is introduced in the buffer layer. High-speed IGBT's were fabricated both with voids in the buffer layer or with unlocalized recombination centres. Devices with localized bandgap centres show a lower on-resistance with a fast turn-off behavior.
引用
收藏
页码:333 / 335
页数:3
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