Epitaxial growth and domain coalescence of sexithiophene induced by the steps on cleaved KBr(001)

被引：16

作者：

Ikeda, S

Kiguchi, M

Yoshida, Y

Yase, K

Mitsunaga, T

Inaba, K

Saiki, K

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

[3] Natl Inst Adv Ind Sci & Technol AIST, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

[4] Rigaku Corp, Akishima, Tokyo 1968666, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 1-2期

关键词：

atomic force microscopy; X-ray diffraction; molecular beam epitaxy; KBr; sexithiophene; organic semiconductor;

D O I：

10.1016/j.jcrysgro.2004.01.054

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of sexithiophene (6 T) thin films was achieved on KBr (001) under the optimum condition. Atomic force microscopy revealed that the initially formed in-plane orientation was caused by adsorption of 6 T molecules to the native steps on K Br and it helped formation of single-crystalline domains larger than 30 x 30 mum(2). The use of substrate steps as an epitaxial template shows the possibility to create high quality 6 T films with potentially large carrier mobility. (C) 2004 Elsevier B.V. All rights reserved.

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页码：296 / 301

页数：6

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