Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films

被引：25

作者：

Hellwig, Malte ^{[1
]}

Xu, Ke ^{[1
]}

Barreca, Davide ^{[2
,3
]}

Gasparotto, Alberto

Winter, Manuela ^{[1
]}

Tondello, Eugenio

Fischer, Roland A. ^{[1
]}

Devi, Anjana ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, D-44780 Bochum, Germany

[2] Univ Padua, ISTM, CNR, I-35131 Padua, Italy

[3] Univ Padua, INSTM, Dept Chem, I-35131 Padua, Italy

来源：

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY | 2009年 / 08期

关键词：

Gallium; Chemical vapor deposition; Thin films; Oxides; O ligands; CHEMICAL-VAPOR-DEPOSITION; MASS SPECTROMETRIC ANALYSIS; ELECTRICAL-PROPERTIES; GROWTH; LUMINESCENCE; CHEMISTRY; SPECTRA; HAFNIUM; SENSOR;

D O I：

10.1002/ejic.200801062

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Five different homoleptic gallium complexes with malonic diester anions [Ga(ROCOCHOCOR)(3)] [R = Me (1), Et (2), iPr (3), tBu (4) and SiMe3 (5)] have been synthesised and characterised by H-1 and C-13 NMR, IR spectroscopy, electron ionisation mass spectrometry (EI-MS), and single-crystal X-ray diffraction. The thermal properties of the obtained compounds were evaluated by thermogravimetric studies to assess their suitability as precursors for the metal-organic chemical vapour deposition (MOCVD) of Ga2O3 thin films. MOCVD of Ga2O3 thin films was carried out starting from compound 2 in light of the promising features of this precursor. The as-deposited layers are amorphous and can be transformed into the monoclinic beta-Ga2O3 phase upon annealing at 1000 degrees C ex situ. The film morphology was studied by scanning electron microscopy (SEM), and its composition was investigated by energy-dispersive X-ray spectroscopy (EDXS) and X-ray photoelectron spectroscopy (XPS). Almost stoichiometric Ga2O3 thin films with low levels of carbon incorporation were obtained. ((C) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)

引用

页码：1110 / 1117

页数：8

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