Visible emission from ZnO doped with rare-earth ions

被引：92

作者：

Jadwisienczak, WM ^{[1
]}

Lozykowski, HJ ^{[1
]}

Xu, A ^{[1
]}

Patel, B ^{[1
]}

机构：

[1] Ohio Univ, Sch Elect Engn & Comp Sci, Athens, OH 45701 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 07期

基金：

美国国家科学基金会;

关键词：

luminescence; rare-earth ions; doping; wide bandgap semiconductor; ZnO;

D O I：

10.1007/s11664-002-0235-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the results of a cathodoluminescence (CL) and photoluminescence (PL) study of ZnO-bulk single crystals and epilayer thin-film samples grown on a sapphire (0001) substrate and doped by implantation with rare-earth ions (RE3+): Pr3+, Dy3+, Ho3+, Er3+, Tm3+ (bulk crystals, co-doped with Li), Sm3+, Dy3+, and Er3+ (epilayers). The PL and PL excitation (PLE) spectra of polycrystalline ZnO doped with RE3+ ions (Nd3+, Dy3+ Er3+, and Tm3+) and codoped with Li+, Cl-, and N- ions have also been studied.

引用

页码：776 / 784

页数：9

共 27 条

[1] Photoluminescence of polycrystalline zinc oxide co-activated with trivalent rare earth ions and lithium. Insertion of rare-earth ions into zinc oxide [J].

Bachir, S ;

Azuma, K ;

Kossanyi, J ;

Valat, P ;

RonfardHaret, JC .

JOURNAL OF LUMINESCENCE, 1997, 75 (01) :35-49

[2] SOME OPTICAL-PROPERTIES OF RARE-EARTH (DY, ND AND SM) ACTIVATED ZNO PHOSPHORS [J].

BHUSHAN, S ;

KAZA, BR ;

PANDEY, AN .

PRAMANA, 1978, 11 (01) :67-72

[3] ION IMPLANATION IN GROUP II-VI COMPOUNDS [J].

BRYANT, FJ .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (02) :191-263

[4] Electronic properties of a grain boundary in Sb-doped ZnO [J].

Carlsson, JM ;

Hellsing, B ;

Domingos, HS ;

Bristowe, PD .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (44) :9937-9943

[5] Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source [J].

Guo, XL ;

Tabata, H ;

Kawai, T .

JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) :135-139

[6] PHOTOLUMINESCENCE OF EU-DOPED ZNO PHOSPHORS [J].

HAYASHI, Y ;

NARAHARA, H ;

UCHIDA, T ;

NOGUCHI, T ;

IBUKI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :1878-1882

[7] Local structure analysis of an optically active center in Er-doped ZnO thin film [J].

Ishii, M ;

Komuro, S ;

Morikawa, T ;

Aoyagi, Y .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3679-3684

[8] The optically active center and its activation process in Er-doped Si thin film produced by laser ablation [J].

Ishii, M ;

Ishikawa, T ;

Ueki, T ;

Komuro, S ;

Morikawa, T ;

Aoyagi, Y ;

Oyanagi, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4024-4031

[9] p-type electrical conduction in ZnO thin films by Ga and N codoping [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207

[10] ELECTRONIC-PROPERTIES OF VAPOR-GROWN HETEROEPITAXIAL ZNO FILM ON SAPPHIRE [J].

KASUGA, M ;

OGAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :794-798

← 1 2 3 →