Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

被引：14

作者：

Jang, JS ^{[1
]}

Lee, CW

Park, SJ

Seong, TY

Ferguson, IT

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 09期

关键词：

gallium nitride; ohmic contact; Schottky barrier; specific contact resistance; surface Fermi level;

D O I：

10.1007/s11664-002-0181-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 X 10(17) cm(-3)). It is shown that annealing at 500degreesC for 2 min in a N-2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(+/- 0.2) X 10(-4) and 2.4(+/- 0.2) X 10(-5) Omegacm(2) for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

引用

页码：903 / 906

页数：4

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