Field-effect transistor based on KTaO3 perovskite

被引：47

作者：

Ueno, K ^{[1
]}

Inoue, IH

Yamada, T

Akoh, H

Tokura, Y

Takagi, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778581, Japan

[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[4] JST, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1703841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An n-channel accumulation-type field-effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10(4) and a field-effect mobility of 0.4 cm(2)/V s at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field-effect mobility was almost temperature independent down to 200 K. Our results indicate that the Al2O3/KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics. (C) 2004 American Institute of Physics.

引用

页码：3726 / 3728

页数：3

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