Micromachining of quartz crystal with excimer lasers by laser-induced backside wet etching

被引：94

作者：

Wang, J ^{[1
]}

Niino, H ^{[1
]}

Yabe, A ^{[1
]}

机构：

[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期

关键词：

PACS: 42.62; 81.40; 81.65;

D O I：

10.1007/s003390051398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated a well-defined pattern of lines and spaces on the surface of a quartz crystal plate (c-SiO2) with micron-sized features, using laser-induced backside wet etching (LIBWE). The line patterns obtained using LIBWE showed a high aspect ratio of about 3. The etch rates of fused silica (a-SiO2) ranged from 5 to 25 nm/pulse with KrF laser irradiation from 0.4-1.3 J/cm(2). Threshold fluences for a-SiO2 and c-SiO2 were 0.23 and 0.34J/cm(2), respectively. The single-pulse etch depth was not affected by the repetition rates of laser pulses from 1-50 Hz.

引用

页码：S271 / S273

页数：3

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