Percolation and tunneling in composite materials

被引:193
作者
Balberg, I [1 ]
Azulay, D [1 ]
Toker, D [1 ]
Millo, O [1 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 15期
基金
以色列科学基金会;
关键词
tunneling; percolation; composites; non-universal behavior; eletro-thermal switching; transport in multi-phase systems; scanning local probe microscopies and; spectroscopies;
D O I
10.1142/S0217979204025336
中图分类号
O59 [应用物理学];
学科分类号
摘要
Classical percolation theory is concerned with the onset of geometrical connectivity and the accompanied onset of electrical connectivity in disordered systems. It was found, however, that in many systems, such as various composites, the geometrical and electrical onsets of the connectivity are not simultaneous and the correlation between them depends on physical processes such as tunneling. The difference between the above two types of systems and the consequences for the electrical transport properties of the latter composites have been largely ignored in the past. The application of scanning local probe microscopies and some recent theoretical developments have enabled a better understanding of the latter systems and their sometimes "strange" behavior as bona fide percolation systems. In this review we consider the above issues and their manifestation in three types of systems: Carbon Black-Polymer composites, metal-insulator cermets and hydrogenated microcrystalline silicon.
引用
收藏
页码:2091 / 2121
页数:31
相关论文
共 116 条
[41]   FREE-ELECTRONS AND DEFECTS IN MICROCRYSTALLINE SILICON STUDIED BY ELECTRON-SPIN-RESONANCE [J].
FINGER, F ;
MALTEN, C ;
HAPKE, P ;
CARIUS, R ;
FLUCKIGER, R ;
WAGNER, H .
PHILOSOPHICAL MAGAZINE LETTERS, 1994, 70 (04) :247-254
[42]   Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD [J].
Fonrodona, M ;
Soler, D ;
Asensi, J ;
Bertomeu, J ;
Andreu, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :14-19
[43]   Fractal analysis of the percolation network in epoxy-polypyrrole composites [J].
Fournier, J ;
Boiteux, G ;
Seytre, G .
PHYSICAL REVIEW B, 1997, 56 (09) :5207-5212
[44]   Bandtails and defects in microcrystalline silicon (μc-Si:H) [J].
Fuhs, W ;
Kanschat, P ;
Lips, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1792-1795
[45]   Segregated tunneling-percolation model for transport nonuniversality -: art. no. 024207 [J].
Grimaldi, C ;
Maeder, T ;
Ryser, P ;
Strässler, S .
PHYSICAL REVIEW B, 2003, 68 (02)
[46]  
HAKIZABERA P, 1995, MATER RES SOC SYMP P, V367, P423
[47]   DIFFERENCES BETWEEN LATTICE AND CONTINUUM PERCOLATION TRANSPORT EXPONENTS [J].
HALPERIN, BI ;
FENG, S ;
SEN, PN .
PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2391-2394
[48]   Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous microcrystalline silicon interface using in situ Kelvin probe technique [J].
Hamma, S ;
Roca i Cabarrocas, PI .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3218-3220
[49]   In situ correlation between the optical and electrical properties of thin intrinsic and n-type microcrystalline silicon films [J].
Hamma, S ;
Cabarrocas, PRI .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) :7282-7288
[50]   Modulated Hall-effect techniques for the study of transport properties of microcrystalline silicon with different grain sizes [J].
Hapke, P ;
Backhausen, U ;
Carius, R ;
Finger, F ;
Ray, S .
AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :789-794