Mechanism of gap opening in a triple-band peierls system: In atomic wires on Si

被引：123

作者：

Ahn, JR

Byun, JH

Koh, H

Rotenberg, E

Kevan, SD

Yeom, HW ^{[1
]}

机构：

[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[4] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.93.106401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

One dimensional (1D) metals are unstable at low temperature undergoing a metal-insulator transition coupled with a periodic lattice distortion, a Peierls transition. Angle-resolved photoemission study for the 1D metallic chains of In on Si(111), featuring a metal-insulator transition and triple metallic bands, clarifies in detail how the multiple band gaps are formed at low temperature. In addition to the gap opening for a half-filled ideal 1D band with a proper Fermi surface nesting, two other quasi-1D metallic bands are found to merge into a single band, opening a unique but k-dependent energy gap through an interband charge transfer. This result introduces a novel gap-opening mechanism for a multiband Peierls system where the interband interaction is important.

引用

页码：106401 / 1

页数：4

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