共 33 条
[1]
Ait-Ouali A, 1998, J APPL PHYS, V83, P3153, DOI 10.1063/1.367129
[2]
Ait-Ouali A, 1998, J APPL PHYS, V84, P5639, DOI 10.1063/1.368822
[3]
LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS
[J].
PHYSICAL REVIEW B,
1984, 29 (12)
:7042-7044
[5]
BENSAADA A, 1994, THESIS U MONTREAL
[6]
HEAVY-HOLE AND LIGHT-HOLE CHARACTER OF OPTICAL-TRANSITIONS IN INAS/GAAS SINGLE-MONOLAYER QUANTUM-WELLS
[J].
PHYSICAL REVIEW B,
1992, 45 (08)
:4217-4220
[7]
CHENNOUF A, 1997, THESIS U MONTREAL
[9]
DYNAMICS OF EXCITON FORMATION AND RELAXATION IN GAAS QUANTUM-WELLS
[J].
PHYSICAL REVIEW B,
1990, 42 (12)
:7434-7438
[10]
EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS
[J].
PHYSICAL REVIEW B,
1985, 31 (04)
:2497-2498