MOCVD technology for semiconductors

被引:72
作者
Thompson, AG
机构
[1] EMCORE Corporation, Somerset, NJ 08873
关键词
MOCVD; semiconductors;
D O I
10.1016/S0167-577X(96)00215-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article commences with a brief review of the MOCVD process as it applies to semiconductors. The various precursors used, including metalorganic compounds, hydride gases, and dopants are discussed, together with the basic deposition process. Typical MOCVD systems used for R&D and manufacturing are described, including the constraints imposed by safety and environmental requirements. Recent advances in the R&D arena, such as growth mechanisms, new metalorganic materials, heteroepitaxy, the use of alternative carrier gases, and reactor modeling are then covered. In the manufacturing arena, large scale reactors, cost of ownership (COO) models, and in situ controls are detailed. We conclude with a look at newer applications for materials prepared by MOCVD, including multi-junction solar cells, high brightness LEDs covering the visible spectrum, and laser diodes.
引用
收藏
页码:255 / 263
页数:9
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