Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes

被引：115

作者：

Choi, J. S. ^{[1
]}

Kim, J. -S. ^{[1
]}

Hwang, I. R. ^{[1
]}

Hong, S. H. ^{[1
]}

Jeon, S. H. ^{[1
]}

Kang, S. -O. ^{[1
]}

Park, B. H. ^{[1
]}

Kim, D. C. ^{[2
]}

Lee, M. J. ^{[2
]}

Seo, S. ^{[2
]}

机构：

[1] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

基金：

瑞典研究理事会;

关键词：

electrical conductivity transitions; electrodes; nickel compounds; platinum; Poole-Frenkel effect; Schottky barriers; sputter deposition; strontium compounds; thin films; MEMORY; TRANSITION; SRTIO3;

D O I：

10.1063/1.3173813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated by inductive Ohmic behavior and Poole-Frenkel effect, respectively. However, the conductions of on- and off-states in bipolar switching follow capacitive Ohmic behavior and Schottky effect, respectively. Therefore, we infer that the mechanisms of the unipolar and bipolar switching behaviors in NiO films are related with changes in bulk-limited filamentary conduction and interfacial Schottky barrier, respectively.

引用

页数：3

共 21 条

[1]

[Anonymous], 2003, AGILENT TECHNOLOGIES

[2] Effect of Oxygen Content on Dielectric Properties of Float Zone Grown Titanium Dioxide (TiO2) Crystal [J].

Bamzai, K. K. ;

Koohpayeh, S. M. ;

Kaur, B. ;

Fort, D. ;

Abell, J. S. .

FERROELECTRICS, 2008, 377 :1-21

[3] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[4] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[5] CONSIDERATION OF POOLE-FRENKEL EFFECT ON ELECTRIC CONDUCTION IN INSULATORS [J].

IEDA, M ;

SAWA, G ;

KATO, S .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :3737-&

[6]

KAO KC, 2004, DIELECTRIC PHENOMENA, pCH7

[7] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[8] Study of transport and dielectric of resistive memory states in NiO thin film [J].

Kim, MG ;

Kim, SM ;

Choi, EJ ;

Moon, SE ;

Park, J ;

Kim, HC ;

Park, BH ;

Lee, MJ ;

Seo, S ;

Seo, DH ;

Ahn, SE ;

Yoo, IK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1301-L1303

[9] Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions [J].

Kim, S ;

Byun, I ;

Hwang, I ;

Kim, J ;

Choi, J ;

Park, BH ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Joung, YS ;

Yoo, IK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11) :L345-L347

[10] Resistive memory switching in epitaxially grown NiO [J].

Lee, S. R. ;

Char, K. ;

Kim, D. C. ;

Jung, R. ;

Seo, S. ;

Li, X. S. ;

Park, G. -S. ;

Yoo, I. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

← 1 2 3 →