Orientation control of ZnO thin film prepared by CVD

被引：34

作者：

Funakubo, H ^{[1
]}

Mizutani, N ^{[1
]}

Yonetsu, M ^{[1
]}

Saiki, A ^{[1
]}

Shinozaki, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Fac Engn, Dept Inorgan Mat, Meguro Ku, Tokyo 152, Japan

来源：

JOURNAL OF ELECTROCERAMICS | 1999年 / 4卷 / Suppl 1期

关键词：

zinc oxide; film formation; crystal arrangement;

D O I：

10.1023/A:1009965432447

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The orientations of ZnO films parallel and perpendicular to the surface of the substrate were investigated as functions of the deposition temperature and substrate material. The degree of orientation increased with increasing deposition temperature and became perfectly oriented at a characteristic temperature. At a deposition temperature of 620 degrees C, polycrystalline films were obtained on polycrystalline Al2O3; substrates. (001) oriented films were obtained on fused silica and (100) rutile substrates. Epitaxially grown (110) and (001) oriented films were obtained on various kinds of single crystal substrates. The difference between the (110) and (001) orientations was explained by the lattice mismatch between the films and the substrates. Epitaxial growth of films exhibiting two directions was observed when the two equivalent directions of lattice mismatch existed. These results show the possible formation of various types of the crystallographic relationships between the grains in the film.

引用

页码：25 / 32

页数：8

共 21 条

[1] GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS [J].