RAPID FORMATION OF ZINC-OXIDE FILMS BY AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION METHOD

Zinc oxide films were prepared by an atmospheric-pressure chemical vapor deposition method using (acetylacetonato)-zinc as a source material. Transparent and uniform ZnO films of considerable area (20 x 70 mm, similar to 0.3 mu m thick) could be obtained easily on a crown glass (CGW #200) with a high deposition rate. The deposition rate first remained constant with increasing substrate temperature (T-s), then increased abruptly from 120 nm/min at T-s = 550 degrees C to 220 nm/min at T-s = 600 degrees C, and finally stopped increasing above T-s = 600 degrees C. The maximum preferred orientation and best crystallinity of the films were obtained at T-s = 550 degrees C.