Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator

被引：9

作者：

Yu, EF

Shen, J

Walther, M

Lee, TC

Zhang, R

机构：

[1] Motorola Inc, Tempe, AZ 85284 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[4] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 04期

关键词：

D O I：

10.1049/el:20000281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al0.98Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3/GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about -4V, a transconductance of 23.9mS/mm and a low gate leakage current.

引用

收藏

页码：359 / 361

页数：3

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