Resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures

We report on resonant tunneling through ZnSe/BeTe double-barrier single-quantum-well structures. Negative differential resistance has been observed in the current-voltage characteristics up to room temperature. Due to a conduction-band offset of more than 2 eV, four resonances with negative differential resistance could be detected for this semiconductor material combination at liquid-helium temperature. The structures exhibit a peak-to-valley ratio up to 6:1 at 4.2 K. Current-voltage characteristics as a function of temperature have been studied and analyzed. (C) 1996 American Institute of Physics.